Principal Engineer - GaN Epitaxy Development

About the Role

Join Infineon's Research & Development team as a GaN Epitaxy Development Engineer and combine inventive thinking with technical proficiency to help advance semiconductor technologies. This pivotal role allows you to lead cutting-edge projects, innovate in epitaxial growth processes, and contribute to shaping the future of power and IoT device performance.

Responsibilities

• Engineer GaN epitaxial layer designs including buffer layers, superlattice structures, and high electron mobility transistor (HEMT) architectures tailored to achieve precise device performance objectives.
• Engage directly in hands-on optimization of Metal-Organic Chemical Vapor Deposition (MOCVD) recipes to enhance epitaxial growth processes.
• Facilitate the transfer of new epitaxy methodologies from the R&D phase to scalable, high-yield manufacturing environments, overcoming challenges related to defect density, wafer stress, and layer consistency.
• Employ Design of Experiments (DOE) and Statistical Process Control (SPC) frameworks to monitor, analyze, and improve process quality and repeatability.
• Interpret characterization data leveraging tools such as Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM), and X-ray Diffraction (XRD) for correlating material properties to final device attributes.
• Provide strategic leadership by advising on material and equipment investments, defining long-term product technology roadmaps, and mentoring engineers at various levels to establish technical standards.
• Collaborate cross-functionally with device, process integration, and failure analysis teams to effectively address and resolve technical issues.

Qualifications

• A minimum of a Master’s degree in Materials Science, Physics, Electrical Engineering, or Chemical Engineering is required; a Ph.D. in a related physical science or microelectronics field is preferred.
• Possess 7 to 15+ years of hands-on experience in semiconductor research and manufacturing, focusing on III-V hetero-epitaxy and Gallium Nitride (GaN) growth.
• Comprehensive expertise with MOCVD technology including platforms such as Aixtron and Veeco, specifically for GaN-on-Silicon or GaN-on-Sapphire applications.
• Demonstrated success in scaling epitaxial processes from laboratory development through pilot stages to high-volume manufacturing production.
• Advanced proficiency in epitaxial growth design, characterization techniques (XRD, AFM, TEM, Photoluminescence, Ellipsometry, Secondary Ion Mass Spectrometry), and statistical data analysis using SPC, DOE, and software tools like JMP.
• Strong leadership abilities as a technical authority and mentor, with proven skills in fostering teamwork and steering organizational strategy across global interdisciplinary teams.

Additional Information

Infineon is committed to fostering an inclusive workplace that values diversity and equal opportunity. The company maintains a culture of respect, openness, and fairness throughout the recruitment and employment process. Applicants are encouraged to communicate any accommodations needed during the interview process to ensure full participation.

Infineon stands at the forefront of sustainable technology, driving innovations in energy efficiency, mobility safety, and secure IoT applications to make everyday life safer, greener, and easier.