Principal Engineer, Reliability Engineering - GaN Intrinsic Reliability

About Analog Devices

Analog Devices, Inc. is a prominent global semiconductor company listed on NASDAQ (ADI) that integrates analog, digital, AI, and software technologies to pioneer innovations at the Intelligent Edge. With a revenue exceeding $11 billion in fiscal year 2025, ADI is committed to enabling breakthroughs in fields such as climate change mitigation, automation, robotics, mobility, healthcare, energy, and data centers.

The Team

The Intrinsic Reliability (iRel) Group is tasked with guaranteeing the lifetime robustness of semiconductor products and processes. This is accomplished through thorough investigation of the intrinsic reliability within semiconductor devices, circuits, and sensors. The group includes professionals from various disciplines including electronics, physics, and mathematics, and operates across two locations: Limerick, Ireland (ADLK) and San Jose, California (ADSV). This role is based in Limerick.

Position Overview

We are seeking a Principal Engineer specializing in GaN intrinsic reliability to lead the technical efforts in reliability characterization, modeling, and qualification of GaN and Wide Bandgap (WBG) semiconductor devices, focusing on 100V and 650V technologies. This role plays a crucial part in lowering risks in GaN product development as well as advancing Analog Devices’ high-voltage and power semiconductor product roadmap while maintaining top-tier reliability standards.

Responsibilities

• Lead the development and execution of reliability strategies for GaN devices spanning 100V to 650V to align with product roadmaps.
• Design and implement qualification protocols including High-Temperature Gate Bias (HTGB), High-Temperature Reverse Bias (HTRB), switching, and transient stress assessments.
• Conduct physics-of-failure (PoF) analyses to determine degradation mechanisms and drive effective root-cause solutions.
• Create and validate predictive lifetime and reliability models that incorporate voltage, temperature, and switching dependencies for GaN devices.
• Collaborate with design and product teams to identify and mitigate reliability risks early in the product lifecycle.
• Provide expert technical guidance and make authoritative decisions regarding reliability risks, safety margins, and design recommendations.
• Develop and upgrade intrinsic reliability testing infrastructure, encompassing Automated Test Equipment (ATE) and bespoke stress systems.
• Innovate next-generation reliability methodologies applicable to GaN and other WBG technologies, including Silicon Carbide (SiC) and Aluminum Gallium Nitride (AlGaN).

Required Qualifications

• Masters or PhD in Physics, Electrical Engineering, or Semiconductor Engineering.
• A minimum of 10 years' experience in semiconductor reliability engineering with a strong emphasis on GaN or Wide Bandgap semiconductors.

Additional Information

Due to the nature of technical data involved, candidates other than U.S. citizens, permanent residents, or protected individuals may be subject to an export licensing review by U.S. government agencies before employment.

Analog Devices is an equal opportunity employer, committed to diversity and inclusion regardless of race, color, religion, age, ancestry, sex, sexual orientation, gender identity, marital or parental status, disability, veteran or union status, or any other protected characteristic.

Job Type: Experienced Level
Required Travel: None
Shift: Day Shift (1st Shift)